NCEP25ND10AG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP25ND10AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 123.9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: PDFN5X6-8L

 Búsqueda de reemplazo de NCEP25ND10AG MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP25ND10AG datasheet

 ..1. Size:957K  ncepower
 ncep25nd10ag.pdf pdf_icon

NCEP25ND10AG

http //www.ncepower.com NCEP25ND10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS

 7.1. Size:751K  ncepower
 ncep25n10ad.pdf pdf_icon

NCEP25ND10AG

http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS

 7.2. Size:304K  ncepower
 ncep25n10aq.pdf pdf_icon

NCEP25ND10AG

http //www.ncepower.com NCEP25N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 7.3. Size:321K  ncepower
 ncep25n10ag.pdf pdf_icon

NCEP25ND10AG

http //www.ncepower.com NCEP25N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

MOSTRAR MÁS

Otros transistores... NCEP18N10AK, NCEP18N10AQ, NCEP18N10AR, NCEP2390, NCEP2390D, NCEP25N10AD, NCEP25N10AG, NCEP25N10AQ, IRFB4115, NCEP3045BGU, NCEP3045GU, NCEP3060EQ, NCEP3065BQU, NCEP3065QU, NCEP3085EG, NCEP30P90G, NCEP30P90K