NCEP25ND10AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP25ND10AG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 47 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 27.6 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 123.9 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEP25ND10AG
NCEP25ND10AG Datasheet (PDF)
ncep25nd10ag.pdf
http://www.ncepower.com NCEP25ND10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GS
ncep25n10ad.pdf
http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS
ncep25n10aq.pdf
http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses
ncep25n10ag.pdf
http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
ncep25n10ak.pdf
http://www.ncepower.com NCEP25N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
