All MOSFET. NCEP25ND10AG Datasheet

 

NCEP25ND10AG Datasheet and Replacement


   Type Designator: NCEP25ND10AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 123.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: PDFN5X6-8L
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NCEP25ND10AG Datasheet (PDF)

 ..1. Size:957K  ncepower
 ncep25nd10ag.pdf pdf_icon

NCEP25ND10AG

http://www.ncepower.com NCEP25ND10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25ND10AG uses Super Trench II technology that is V =100V,I =30ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GS

 7.1. Size:751K  ncepower
 ncep25n10ad.pdf pdf_icon

NCEP25ND10AG

http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS

 7.2. Size:304K  ncepower
 ncep25n10aq.pdf pdf_icon

NCEP25ND10AG

http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 7.3. Size:321K  ncepower
 ncep25n10ag.pdf pdf_icon

NCEP25ND10AG

http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

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History: STD5N95K5 | BUZ103 | WNMD3014 | SL12N100K | NCEP40PT15G | EN2300 | 1N60L-TF3-T

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