FQP13N50C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP13N50C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 195 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 13 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 56 nC
Resistencia drenaje-fuente RDS(on): 0.48 Ohm
Empaquetado / Estuche: TO220
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FQP13N50C Datasheet (PDF)
1.1. fqp13n50c fqpf13n50c.pdf 
Size:1062K _fairchild_semi
November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia
1.2. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi
May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially t
1.3. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi
TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored t
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