FQP13N50C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP13N50C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO220

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FQP13N50C datasheet

 ..1. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50C

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t

 ..2. Size:1062K  fairchild semi
 fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50C

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especia

 ..3. Size:1172K  onsemi
 fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50C

FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using ON Semiconductor s ID = 6.5 A proprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC) advanced technology has been especially tail

 0.1. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf pdf_icon

FQP13N50C

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially t

MOSTRAR MÁS

Otros transistores... FQB8P10, FQB9N50C, FQD10N20C, FDMC8321LDC, FQD10N20L, FDPF041N06BL1, FQD11P06, FQD12N20, SPP20N60C3, FQD12N20L, FQD5N50C, FQD12N20LTMF085, NDS9952A, FQD12P10TMF085, FQD13N06, FQD13N06L, FQD13N10