Справочник MOSFET. FQP13N50C

 

FQP13N50C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQP13N50C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 195 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FQP13N50C

 

 

FQP13N50C Datasheet (PDF)

 ..1. Size:922K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

FQP13N50C FQP13N50C

TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t

 ..2. Size:1062K  fairchild semi
 fqp13n50c fqpf13n50c.pdf

FQP13N50C FQP13N50C

November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia

 ..3. Size:1172K  onsemi
 fqp13n50c fqpf13n50c.pdf

FQP13N50C FQP13N50C

FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using ON Semiconductors ID = 6.5 Aproprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC)advanced technology has been especially tail

 0.1. Size:1148K  fairchild semi
 fqp13n50cf fqpf13n50cf.pdf

FQP13N50C FQP13N50C

May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t

 6.1. Size:883K  fairchild semi
 fqp13n50 fqpf13n50.pdf

FQP13N50C FQP13N50C

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 6.2. Size:882K  onsemi
 fqp13n50 fqpf13n50.pdf

FQP13N50C FQP13N50C

TMQFETFQP13N50/FQPF13N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

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