FQP13N50C MOSFET Datasheet: N-Ch, 500V, 13A. Full specification with pinout and replacement list

FQP13N50C Specs and Replacement

   Type Designator: FQP13N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO220

FQP13N50C substitution

- MOSFET ⓘ Cross-Reference Search

FQP13N50C datasheet

..1. Size:922K fairchild semi
fqp13n50c fqpf13n50c.pdf pdf_icon

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t... See More ⇒

..2. Size:1062K fairchild semi
fqp13n50c fqpf13n50c.pdf pdf_icon

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especia... See More ⇒

..3. Size:1172K onsemi
fqp13n50c fqpf13n50c.pdf pdf_icon

FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using ON Semiconductor s ID = 6.5 A proprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC) advanced technology has been especially tail... See More ⇒

0.1. Size:1148K fairchild semi
fqp13n50cf fqpf13n50cf.pdf pdf_icon

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially t... See More ⇒