NCEP85T10G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP85T10G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.5 nS

Cossⓘ - Capacitancia de salida: 648 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm

Encapsulados: DFN5X6-8L

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NCEP85T10G datasheet

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NCEP85T10G

http //www.ncepower.com NCEP85T10G NCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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ncep85t15d.pdf pdf_icon

NCEP85T10G

http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

 6.2. Size:323K  ncepower
ncep85t16d.pdf pdf_icon

NCEP85T10G

Pb Free Product http //www.ncepower.com NCEP85T16D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:323K  ncepower
ncep85t12.pdf pdf_icon

NCEP85T10G

Pb Free Product http //www.ncepower.com NCEP85T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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