All MOSFET. NCEP85T10G Datasheet

 

NCEP85T10G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP85T10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 90 W
   Maximum Drain-Source Voltage |Vds|: 85 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 55 nC
   Rise Time (tr): 12.5 nS
   Drain-Source Capacitance (Cd): 648 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
   Package: DFN5X6-8L

 NCEP85T10G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP85T10G Datasheet (PDF)

 ..1. Size:365K  ncepower
ncep85t10g.pdf

NCEP85T10G
NCEP85T10G

http://www.ncepower.com NCEP85T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.1. Size:912K  ncepower
ncep85t15d.pdf

NCEP85T10G
NCEP85T10G

http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 6.2. Size:323K  ncepower
ncep85t16d.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:323K  ncepower
ncep85t12.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.4. Size:347K  ncepower
ncep85t12d.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.5. Size:385K  ncepower
ncep85t14.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.6. Size:345K  ncepower
ncep85t16.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.7. Size:385K  ncepower
ncep85t11.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.8. Size:342K  ncepower
ncep85t15.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 6.9. Size:355K  ncepower
ncep85t14d.pdf

NCEP85T10G
NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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