Справочник MOSFET. NCEP85T10G

 

NCEP85T10G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP85T10G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 12.5 ns
   Cossⓘ - Выходная емкость: 648 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
   Тип корпуса: DFN5X6-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP85T10G Datasheet (PDF)

 ..1. Size:365K  ncepower
 ncep85t10g.pdf pdf_icon

NCEP85T10G

http://www.ncepower.com NCEP85T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 6.1. Size:912K  ncepower
 ncep85t15d.pdf pdf_icon

NCEP85T10G

http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 6.2. Size:323K  ncepower
 ncep85t16d.pdf pdf_icon

NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:323K  ncepower
 ncep85t12.pdf pdf_icon

NCEP85T10G

Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HFS13N60U | SPA08N80C3 | SPA07N65C3

 

 
Back to Top

 


 
.