NCEPB302G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEPB302G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 344 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: DFN5X6-8L
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NCEPB302G Datasheet (PDF)
ncepb302g.pdf
http://www.ncepower.com NCEPB302G30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB302G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOS
ncepb303gu.pdf
http://www.ncepower.com NCEPB303GU30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB303GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized M
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SVF20NE50PN | HQB7N65C | FQI46N15 | JFPC8N65C | P1603BEBA | 40600 | IRF5305
History: SVF20NE50PN | HQB7N65C | FQI46N15 | JFPC8N65C | P1603BEBA | 40600 | IRF5305
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