NCEPB302G Todos los transistores

 

NCEPB302G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEPB302G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 344 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEPB302G Datasheet (PDF)

 ..1. Size:533K  ncepower
ncepb302g.pdf

NCEPB302G
NCEPB302G

http://www.ncepower.com NCEPB302G30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB302G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOS

 7.1. Size:526K  ncepower
ncepb303gu.pdf

NCEPB302G
NCEPB302G

http://www.ncepower.com NCEPB303GU30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB303GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized M

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVF20NE50PN | HQB7N65C | FQI46N15 | JFPC8N65C | P1603BEBA | 40600 | IRF5305

 

 
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History: SVF20NE50PN | HQB7N65C | FQI46N15 | JFPC8N65C | P1603BEBA | 40600 | IRF5305

NCEPB302G
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