NCEPB302G MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEPB302G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 2.5 nS
Drain-Source Capacitance (Cd): 344 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: DFN5X6-8L
NCEPB302G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEPB302G Datasheet (PDF)
ncepb302g.pdf
http://www.ncepower.com NCEPB302G30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB302G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOS
ncepb303gu.pdf
http://www.ncepower.com NCEPB303GU30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB303GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized M
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