All MOSFET. NCEPB302G Datasheet

 

NCEPB302G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEPB302G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 344 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6-8L

 NCEPB302G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEPB302G Datasheet (PDF)

 ..1. Size:533K  ncepower
ncepb302g.pdf

NCEPB302G
NCEPB302G

http://www.ncepower.com NCEPB302G30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB302G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOS

 7.1. Size:526K  ncepower
ncepb303gu.pdf

NCEPB302G
NCEPB302G

http://www.ncepower.com NCEPB303GU30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB303GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized M

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