MRF137 Todos los transistores

 

MRF137 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF137
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: CASE211-07
 

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MRF137 Datasheet (PDF)

 ..1. Size:196K  motorola
 mrf137.pdf pdf_icon

MRF137

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)

 ..2. Size:431K  macom
 mrf137.pdf pdf_icon

MRF137

MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. NChannel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and largesignal characterizati

 0.1. Size:98K  motorola
 mrf1375r.pdf pdf_icon

MRF137

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for

 0.2. Size:196K  motorola
 mrf137re.pdf pdf_icon

MRF137

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)

MOSTRAR MÁS

Otros transistores... NCEPB302G , NCEPB303GU , NCES120R036T4 , NCES120R062T4 , QM0930M3 , MRF134 , MRF136 , MRF136Y , 7N65 , MRF138 , MRF140 , MRF141 , MRF141G , MRF148 , MRF150 , MRF1507 , MRF1507T1 .

History: 2SK526 | AOD2904 | SL20N10

 

 
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