MRF137 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF137

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: CASE211-07

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MRF137 datasheet

 ..1. Size:196K  motorola
mrf137.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)

 ..2. Size:431K  macom
mrf137.pdf pdf_icon

MRF137

MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N Channel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and large signal characterizati

 0.1. Size:98K  motorola
mrf1375r.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for

 0.2. Size:196K  motorola
mrf137re.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)

Otros transistores... NCEPB302G, NCEPB303GU, NCES120R036T4, NCES120R062T4, QM0930M3, MRF134, MRF136, MRF136Y, IRF630, MRF138, MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1