MRF137 Specs and Replacement

Type Designator: MRF137

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: CASE211-07

MRF137 substitution

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MRF137 datasheet

 ..1. Size:196K  motorola
mrf137.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical) ... See More ⇒

 ..2. Size:431K  macom
mrf137.pdf pdf_icon

MRF137

MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N Channel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and large signal characterizati... See More ⇒

 0.1. Size:98K  motorola
mrf1375r.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for ... See More ⇒

 0.2. Size:196K  motorola
mrf137re.pdf pdf_icon

MRF137

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical) ... See More ⇒

Detailed specifications: NCEPB302G, NCEPB303GU, NCES120R036T4, NCES120R062T4, QM0930M3, MRF134, MRF136, MRF136Y, IRF630, MRF138, MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.