MRF151G Todos los transistores

 

MRF151G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF151G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 125 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: CASE375-04

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MRF151G Datasheet (PDF)

 ..1. Size:148K  motorola
mrf151g.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 0.1. Size:156K  motorola
mrf151grev8d.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 0.2. Size:148K  motorola
mrf151gr.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 8.1. Size:173K  motorola
mrf151.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.2. Size:173K  motorola
mrf151re.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.3. Size:184K  motorola
mrf151rev8.pdf

MRF151G
MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.4. Size:345K  macom
mrf151.pdf

MRF151G
MRF151G

MRF151 Part Status: Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13

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History: IPD65R600C6 | JCS24N50ABH

 

 
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History: IPD65R600C6 | JCS24N50ABH

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