All MOSFET. MRF151G Datasheet

 

MRF151G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MRF151G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: CASE375-04

 MRF151G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MRF151G Datasheet (PDF)

 ..1. Size:148K  motorola
mrf151g.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 0.1. Size:156K  motorola
mrf151grev8d.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 0.2. Size:148K  motorola
mrf151gr.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch

 8.1. Size:173K  motorola
mrf151.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.2. Size:173K  motorola
mrf151re.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.3. Size:184K  motorola
mrf151rev8.pdf

MRF151G MRF151G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan

 8.4. Size:345K  macom
mrf151.pdf

MRF151G MRF151G

MRF151 Part Status: Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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