MRF151G. Аналоги и основные параметры

Наименование производителя: MRF151G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 500 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 125 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 200 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 225 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: CASE375-04

Аналог (замена) для MRF151G

- подборⓘ MOSFET транзистора по параметрам

 

MRF151G даташит

 ..1. Size:148K  motorola
mrf151g.pdfpdf_icon

MRF151G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 0.1. Size:156K  motorola
mrf151grev8d.pdfpdf_icon

MRF151G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 0.2. Size:148K  motorola
mrf151gr.pdfpdf_icon

MRF151G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch

 8.1. Size:173K  motorola
mrf151.pdfpdf_icon

MRF151G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan

Другие IGBT... MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, MRF151, K3569, MRF154, MRF156, MRF156R, MRF157, MRF158, MRF160, MRF164W, MRF166