MRF151G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MRF151G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 500 W
Предельно допустимое напряжение сток-исток |Uds|: 125 V
Предельно допустимое напряжение затвор-исток |Ugs|: 40 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 200 °C
Выходная емкость (Cd): 225 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: CASE375-04
MRF151G Datasheet (PDF)
mrf151g.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151grev8d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151gr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf151.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf151re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf151rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF151/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF151Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf151.pdf
MRF151 Part Status: Released RF Power Field-Effect Transistor M/A-COM Products RoHS Compliant 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain 18 dB (22 dB Typ) Efficiency 40% Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
