MRF151G. Аналоги и основные параметры
Наименование производителя: MRF151G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 125 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 225 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: CASE375-04
Аналог (замена) для MRF151G
- подборⓘ MOSFET транзистора по параметрам
MRF151G даташит
mrf151g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
mrf151grev8d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
mrf151gr.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151G/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV ch
mrf151.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF151/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV chan
Другие IGBT... MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, MRF151, K3569, MRF154, MRF156, MRF156R, MRF157, MRF158, MRF160, MRF164W, MRF166
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Список транзисторов
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