MRF166 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF166

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.667 Ohm

Encapsulados: CASE211-07

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MRF166 datasheet

 ..1. Size:154K  motorola
mrf166 mrf166c.pdf pdf_icon

MRF166

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line RF Power MRF166 Field Effect Transistors MRF166C N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND

 0.1. Size:111K  motorola
mrf166c.pdf pdf_icon

MRF166

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166C/D The RF MOSFET Line RF Power MRF166C Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND Outpu

 0.2. Size:154K  motorola
mrf166re.pdf pdf_icon

MRF166

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166/D The RF MOSFET Line RF Power MRF166 Field Effect Transistors MRF166C N Channel Enhancement Mode MOSFETs Designed primarily for wideband large signal output and driver from 30 500 MHz. Low Crss 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET MRF166C Typical Performance at 400 MHz, 28 Vdc BROADBAND

 0.3. Size:134K  motorola
mrf166w.pdf pdf_icon

MRF166

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF166W/D The RF MOSFET Line Power Field Effect Transistor MRF166W N Channel Enhancement Mode MOSFET Designed primarily for wideband large signal output and driver stages to 500 MHz. Push Pull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts 40 W,

Otros transistores... MRF151G, MRF154, MRF156, MRF156R, MRF157, MRF158, MRF160, MRF164W, 12N60, MRF166C, MRF166W, MRF171, MRF173, MRF173CQ, MRF174, MRF175GU, MRF175GV