MRF166 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MRF166
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 200 °C
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.667 Ohm
Тип корпуса: CASE211-07
MRF166 Datasheet (PDF)
mrf166 mrf166c.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
mrf166c.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
mrf166re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
mrf166w.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
mrf166cr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
mrf166wr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
mrf166c.pdf
MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500MHz. NChannel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MS13N50
History: MS13N50
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918