Справочник MOSFET. MRF166

 

MRF166 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MRF166
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 200 °C
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.667 Ohm
   Тип корпуса: CASE211-07

 Аналог (замена) для MRF166

 

 

MRF166 Datasheet (PDF)

 ..1. Size:154K  motorola
mrf166 mrf166c.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND

 0.1. Size:111K  motorola
mrf166c.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu

 0.2. Size:154K  motorola
mrf166re.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND

 0.3. Size:134K  motorola
mrf166w.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,

 0.4. Size:111K  motorola
mrf166cr.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu

 0.5. Size:134K  motorola
mrf166wr.pdf

MRF166
MRF166

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,

 0.6. Size:555K  macom
mrf166c.pdf

MRF166
MRF166

MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500MHz. NChannel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc

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History: MS13N50

 

 
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