MRF166
MOSFET. Datasheet pdf. Equivalent
Type Designator: MRF166
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 200
°C
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.667
Ohm
Package: CASE211-07
MRF166
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MRF166
Datasheet (PDF)
..1. Size:154K motorola
mrf166 mrf166c.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
0.1. Size:111K motorola
mrf166c.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
0.2. Size:154K motorola
mrf166re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166/DThe RF MOSFET LineRF PowerMRF166Field Effect TransistorsMRF166CNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBAND
0.3. Size:134K motorola
mrf166w.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
0.4. Size:111K motorola
mrf166cr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166C/DThe RF MOSFET LineRF PowerMRF166CField Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned primarily for wideband largesignal output and driver from 30500MHz. Low Crss 4.5 pF @ VDS = 28 V20 W, 500 MHzMOSFET MRF166C Typical Performance at 400 MHz, 28 VdcBROADBANDOutpu
0.5. Size:134K motorola
mrf166wr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF166W/DThe RF MOSFET LinePower Field Effect TransistorMRF166WNChannel EnhancementMode MOSFETDesigned primarily for wideband largesignal output and driver stages to500 MHz. PushPull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 VdcOutput Power = 40 Watts 40 W,
0.6. Size:555K macom
mrf166c.pdf
MRF166C The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 20W, 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500MHz. NChannel enhancement mode MOSFET MRF166C Guaranteed performance at 500 MHz, 28 Vdc Output power = 20 W Gain = 13.5 dB Efficiency = 50% Replacement for industry standards suc
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