MRF175GV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF175GV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6 VCossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: CASE375-04
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MRF175GV Datasheet (PDF)
mrf175gu mrf175gv.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra
mrf175gu.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st
mrf175l .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
mrf175lu mrf175lv.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: ZXMN10B08E6TA
History: ZXMN10B08E6TA
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