MRF175GV Todos los transistores

 

MRF175GV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF175GV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 400 W
   Voltaje máximo drenador - fuente |Vds|: 65 V
   Voltaje máximo fuente - puerta |Vgs|: 40 V
   Corriente continua de drenaje |Id|: 26 A
   Temperatura máxima de unión (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: CASE375-04

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MRF175GV Datasheet (PDF)

 ..1. Size:183K  motorola
mrf175gu mrf175gv.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 7.1. Size:183K  motorola
mrf175gu.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 8.1. Size:138K  motorola
mrf175lurev8.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 8.2. Size:156K  motorola
mrf175lu.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

 8.3. Size:158K  motorola
mrf175l .pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 8.4. Size:158K  motorola
mrf175lu mrf175lv.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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