MRF175GV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF175GV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: CASE375-04
Búsqueda de reemplazo de MOSFET MRF175GV
Principales características: MRF175GV
mrf175gu mrf175gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
mrf175gu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
mrf175lurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
mrf175lu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st
Otros transistores... MRF166 , MRF166C , MRF166W , MRF171 , MRF173 , MRF173CQ , MRF174 , MRF175GU , AON7506 , MRF175LU , MRF175LV , MRF176GU , MRF176GV , MRF177 , MRF177M , MRF184 , MRF184S .
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