MRF175GV Todos los transistores

 

MRF175GV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF175GV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: CASE375-04
     - Selección de transistores por parámetros

 

MRF175GV Datasheet (PDF)

 ..1. Size:183K  motorola
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MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 7.1. Size:183K  motorola
mrf175gu.pdf pdf_icon

MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 8.1. Size:138K  motorola
mrf175lurev8.pdf pdf_icon

MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 8.2. Size:156K  motorola
mrf175lu.pdf pdf_icon

MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AM1340N | WMR07N03T1 | IRFP4710PBF | DKI10526 | AP9918J | 7N65KL-TN3-R | 2SK740

 

 
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