All MOSFET. MRF175GV Datasheet

 

MRF175GV MOSFET. Datasheet pdf. Equivalent


   Type Designator: MRF175GV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: CASE375-04

 MRF175GV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MRF175GV Datasheet (PDF)

 ..1. Size:183K  motorola
mrf175gu mrf175gv.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 7.1. Size:183K  motorola
mrf175gu.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

 8.1. Size:138K  motorola
mrf175lurev8.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 8.2. Size:156K  motorola
mrf175lu.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

 8.3. Size:158K  motorola
mrf175l .pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

 8.4. Size:158K  motorola
mrf175lu mrf175lv.pdf

MRF175GV
MRF175GV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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