MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr