MRF177M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF177M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5556 Ohm

Encapsulados: CASE744A-01

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MRF177M datasheet

 ..1. Size:191K  motorola
 mrf177 mrf177m.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a

 8.1. Size:191K  motorola
 mrf177re.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a

 8.2. Size:186K  motorola
 mrf177rev8.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b

 8.3. Size:186K  motorola
 mrf177.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b

MOSTRAR MÁS

Otros transistores... MRF174, MRF175GU, MRF175GV, MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177, 4N60, MRF184, MRF184S, MRF275G, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035