MRF177M Todos los transistores

 

MRF177M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF177M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 270 W
   Voltaje máximo drenador - fuente |Vds|: 65 V
   Voltaje máximo fuente - puerta |Vgs|: 40 V
   Corriente continua de drenaje |Id|: 16 A
   Temperatura máxima de unión (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 6 V
   Conductancia de drenaje-sustrato (Cd): 105 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5556 Ohm
   Paquete / Cubierta: CASE744A-01

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MRF177M Datasheet (PDF)

 ..1. Size:191K  motorola
mrf177 mrf177m.pdf

MRF177M MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.1. Size:191K  motorola
mrf177re.pdf

MRF177M MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.2. Size:186K  motorola
mrf177rev8.pdf

MRF177M MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.3. Size:186K  motorola
mrf177.pdf

MRF177M MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.4. Size:432K  macom
mrf177.pdf

MRF177M MRF177M

MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in pushpull configurations. Can be used in manual gain control, ALC and modulation circuits. NChannel enhancement mode MOSFET Typi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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