MRF177M Todos los transistores

 

MRF177M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF177M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5556 Ohm
   Paquete / Cubierta: CASE744A-01
 

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MRF177M Datasheet (PDF)

 ..1. Size:191K  motorola
 mrf177 mrf177m.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.1. Size:191K  motorola
 mrf177re.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.2. Size:186K  motorola
 mrf177rev8.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.3. Size:186K  motorola
 mrf177.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

MOSTRAR MÁS

Otros transistores... MRF174 , MRF175GU , MRF175GV , MRF175LU , MRF175LV , MRF176GU , MRF176GV , MRF177 , 10N65 , MRF184 , MRF184S , MRF275G , MRF5003 , MRF5007 , MRF5007R1 , MRF5015 , MRF5035 .

 

 
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