Справочник MOSFET. MRF177M

 

MRF177M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MRF177M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 200 °C
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5556 Ohm
   Тип корпуса: CASE744A-01
     - подбор MOSFET транзистора по параметрам

 

MRF177M Datasheet (PDF)

 ..1. Size:191K  motorola
 mrf177 mrf177m.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.1. Size:191K  motorola
 mrf177re.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.2. Size:186K  motorola
 mrf177rev8.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.3. Size:186K  motorola
 mrf177.pdf pdf_icon

MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

ПОКАЗАТЬ ЕЩЁ

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History: IRF7805A | SI7913DN | APT11N80BC3 | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F

 

 
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