Справочник MOSFET. MRF177M

 

MRF177M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MRF177M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 200 °C
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5556 Ohm
   Тип корпуса: CASE744A-01

 Аналог (замена) для MRF177M

 

 

MRF177M Datasheet (PDF)

 ..1. Size:191K  motorola
mrf177 mrf177m.pdf

MRF177M
MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.1. Size:191K  motorola
mrf177re.pdf

MRF177M
MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

 8.2. Size:186K  motorola
mrf177rev8.pdf

MRF177M
MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.3. Size:186K  motorola
mrf177.pdf

MRF177M
MRF177M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

 8.4. Size:432K  macom
mrf177.pdf

MRF177M
MRF177M

MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in pushpull configurations. Can be used in manual gain control, ALC and modulation circuits. NChannel enhancement mode MOSFET Typi

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top