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MRF177M Spec and Replacement


   Type Designator: MRF177M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5556 Ohm
   Package: CASE744A-01

 MRF177M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MRF177M Specs

 ..1. Size:191K  motorola
mrf177 mrf177m.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a... See More ⇒

 8.1. Size:191K  motorola
mrf177re.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a... See More ⇒

 8.2. Size:186K  motorola
mrf177rev8.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b... See More ⇒

 8.3. Size:186K  motorola
mrf177.pdf pdf_icon

MRF177M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b... See More ⇒

Detailed specifications: MRF174 , MRF175GU , MRF175GV , MRF175LU , MRF175LV , MRF176GU , MRF176GV , MRF177 , 4N60 , MRF184 , MRF184S , MRF275G , MRF5003 , MRF5007 , MRF5007R1 , MRF5015 , MRF5035 .

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