MRF275G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF275G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3333 Ohm
Encapsulados: CASE375-04
Búsqueda de reemplazo de MRF275G MOSFET
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MRF275G datasheet
mrf275g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain
mrf275grev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain
mrf275l.pdf
MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica- Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform- ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha
Otros transistores... MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, 2SK3568, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50
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