MRF275G Datasheet. Specs and Replacement

Type Designator: MRF275G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3333 Ohm

Package: CASE375-04

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MRF275G datasheet

 ..1. Size:226K  motorola
mrf275g.pdf pdf_icon

MRF275G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain... See More ⇒

 0.1. Size:226K  motorola
mrf275grev0.pdf pdf_icon

MRF275G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain... See More ⇒

 8.1. Size:535K  macom
mrf275l.pdf pdf_icon

MRF275G

MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica- Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform- ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha... See More ⇒

Detailed specifications: MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, IRF1407, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50

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