MRF275G Specs and Replacement
Type Designator: MRF275G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3333 Ohm
Package: CASE375-04
MRF275G substitution
MRF275G datasheet
mrf275g.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain... See More ⇒
mrf275grev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain... See More ⇒
mrf275l.pdf
MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica- Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform- ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha... See More ⇒
Detailed specifications: MRF175LU , MRF175LV , MRF176GU , MRF176GV , MRF177 , MRF177M , MRF184 , MRF184S , 2SK3568 , MRF5003 , MRF5007 , MRF5007R1 , MRF5015 , MRF5035 , 2N7002K1 , BR10N60 , BR20N50 .
Keywords - MRF275G MOSFET specs
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