MRF275G MOSFET. Datasheet pdf. Equivalent
Type Designator: MRF275G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 400 W
Maximum Drain-Source Voltage |Vds|: 65 V
Maximum Gate-Source Voltage |Vgs|: 40 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 26 A
Maximum Junction Temperature (Tj): 200 °C
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3333 Ohm
Package: CASE375-04
MRF275G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MRF275G Datasheet (PDF)
mrf275g.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain
mrf275grev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain
mrf275l.pdf
MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica-Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform-ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
