MRF275G - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF275G/D The RF MOSFET Line Power Field-Effect Transistor MRF275G N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages from 100 500 MHz. 150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 Vdc N CHANNEL MOS Output Power 150 Watts BROADBAND Power Gain

MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica- Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform- ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha