MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain

MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica-Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform-ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha