MRF5035 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica