Справочник MOSFET. MRF5035

 

MRF5035 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MRF5035
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 97 W
   Предельно допустимое напряжение сток-исток |Uds|: 36 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 15 A
   Максимальная температура канала (Tj): 200 °C
   Выходная емкость (Cd): 197 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.3125 Ohm
   Тип корпуса: CASE316-01

 Аналог (замена) для MRF5035

 

 

MRF5035 Datasheet (PDF)

 ..1. Size:142K  motorola
mrf5035.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 0.1. Size:142K  motorola
mrf5035r.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5035/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5035Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 9.1. Size:161K  motorola
mrf5007 mrf5007r1.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 9.2. Size:154K  motorola
mrf5015rev6d.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 9.3. Size:206K  motorola
mrf5003r.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica

 9.4. Size:138K  motorola
mrf5015.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 9.5. Size:161K  motorola
mrf5007rev2.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 9.6. Size:138K  motorola
mrf5015r.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5015/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5015Designed for broadband commercial and industrial applications at frequen-cies to 520 MHz. The high gain and broadband performance of this devicemakes it ideal for largesignal, common source amplifier applications in 12.5

 9.7. Size:158K  motorola
mrf5007r.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

 9.8. Size:158K  motorola
mrf5007.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

 9.9. Size:206K  motorola
mrf5003.pdf

MRF5035 MRF5035

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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