MRF5035 Datasheet. Specs and Replacement
Type Designator: MRF5035 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 197 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3125 Ohm
Package: CASE316-01
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MRF5035 datasheet
mrf5035.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
mrf5035r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
mrf5007 mrf5007r1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒
mrf5015rev6d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
Detailed specifications: MRF177M, MRF184, MRF184S, MRF275G, MRF5003, MRF5007, MRF5007R1, MRF5015, 4N60, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2, BR2N7002LK2, BR40N20, BR4N70, BR50N03
Keywords - MRF5035 MOSFET specs
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