MRF5035 Spec and Replacement
Type Designator: MRF5035
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 97
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 15
A
Tj ⓘ - Maximum Junction Temperature: 200
°C
Cossⓘ -
Output Capacitance: 197
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3125
Ohm
Package: CASE316-01
MRF5035 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MRF5035 Specs
..1. Size:142K motorola
mrf5035.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
0.1. Size:142K motorola
mrf5035r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5035 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.1. Size:161K motorola
mrf5007 mrf5007r1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒
9.2. Size:154K motorola
mrf5015rev6d.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.3. Size:206K motorola
mrf5003r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica... See More ⇒
9.4. Size:138K motorola
mrf5015.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.5. Size:161K motorola
mrf5007rev2.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig... See More ⇒
9.6. Size:138K motorola
mrf5015r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5015/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5015 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 ... See More ⇒
9.7. Size:158K motorola
mrf5007r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒
9.8. Size:158K motorola
mrf5007.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common... See More ⇒
9.9. Size:206K motorola
mrf5003.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica... See More ⇒
Detailed specifications: MRF177M
, MRF184
, MRF184S
, MRF275G
, MRF5003
, MRF5007
, MRF5007R1
, MRF5015
, AO3407
, 2N7002K1
, BR10N60
, BR20N50
, BR2N7002AK2
, BR2N7002LK2
, BR40N20
, BR4N70
, BR50N03
.
Keywords - MRF5035 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.