BRCS035N10SHBD Todos los transistores

 

BRCS035N10SHBD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRCS035N10SHBD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 237 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 180 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 80 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 2050 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: TO-263

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BRCS035N10SHBD Datasheet (PDF)

 ..1. Size:1216K  blue-rocket-elect
brcs035n10shbd.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N10SHBD Rev.A Aug.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r

 2.1. Size:1338K  blue-rocket-elect
brcs035n10shzc.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N10SHZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance

 6.1. Size:2015K  blue-rocket-elect
brcs035n08shbd.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve

 6.2. Size:1676K  blue-rocket-elect
brcs035n04sdp.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N04SDP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

 6.3. Size:1033K  blue-rocket-elect
brcs035n06sdp.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N06SDP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Halogen-free Product. / Applications

 6.4. Size:1801K  blue-rocket-elect
brcs035n03dp.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N03DP Rev.A Nov-2023 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =122 A (V = 20V) DS D GS RDS(ON)@10V3.5mR(Typ.3.4mR) RDS(ON)@4.5V6.5mR(Typ.5.0mR) HF Product. / Applications

 6.5. Size:1243K  blue-rocket-elect
brcs035n08shra.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N08SHRA Rev.A Aug.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS BMS appliances, High power inverter system, Power applianc

 6.6. Size:1212K  blue-rocket-elect
brcs035n08shzc.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N08SHZC Rev.C Mar.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resista

 6.7. Size:1235K  blue-rocket-elect
brcs035n06szc.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N06SZC Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

 6.8. Size:1848K  blue-rocket-elect
brcs035n03zc.pdf

BRCS035N10SHBD
BRCS035N10SHBD

BRCS035N03ZC Rev.A Dec.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features V (V)=30 V I =95A DS DRDS(ON)@10V3.6m(Typ.3.5mR) RDS(ON)@4.5V6.5m(Typ.5.0mR) HF Product. / Applications MB/NB/UMPC/VGA Buck

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