BRCS035N10SHBD Specs and Replacement
Type Designator: BRCS035N10SHBD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 237 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 2050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-263
BRCS035N10SHBD substitution
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BRCS035N10SHBD datasheet
brcs035n10shbd.pdf
BRCS035N10SHBD Rev.A Aug.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r... See More ⇒
brcs035n10shzc.pdf
BRCS035N10SHZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance... See More ⇒
brcs035n08shbd.pdf
BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve... See More ⇒
Detailed specifications: BRCS035N03DP, BRCS035N03ZC, BRCS035N04SDP, BRCS035N06SDP, BRCS035N06SZC, BRCS035N08SHBD, BRCS035N08SHRA, BRCS035N08SHZC, AO3400, BRCS035N10SHZC, BRCS040N02DP, BRCS040N03DP, BRCS045N08SHBD, BRCS045N08SHRA, BRCS045N10SHBD, BRCS045N10SHRA, BRCS050N03DP
Keywords - BRCS035N10SHBD MOSFET specs
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History: BRCS035N08SHZC
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