BRCS035N10SHBD
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS035N10SHBD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 237
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 80
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 2050
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TO-263
BRCS035N10SHBD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS035N10SHBD
Datasheet (PDF)
..1. Size:1216K blue-rocket-elect
brcs035n10shbd.pdf 
BRCS035N10SHBD Rev.A Aug.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r
2.1. Size:1338K blue-rocket-elect
brcs035n10shzc.pdf
BRCS035N10SHZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance
6.1. Size:2015K blue-rocket-elect
brcs035n08shbd.pdf
BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve
6.2. Size:1676K blue-rocket-elect
brcs035n04sdp.pdf
BRCS035N04SDP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
6.3. Size:1033K blue-rocket-elect
brcs035n06sdp.pdf
BRCS035N06SDP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Halogen-free Product. / Applications
6.4. Size:1801K blue-rocket-elect
brcs035n03dp.pdf
BRCS035N03DP Rev.A Nov-2023 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =122 A (V = 20V) DS D GS RDS(ON)@10V3.5mR(Typ.3.4mR) RDS(ON)@4.5V6.5mR(Typ.5.0mR) HF Product. / Applications
6.5. Size:1243K blue-rocket-elect
brcs035n08shra.pdf
BRCS035N08SHRA Rev.A Aug.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS BMS appliances, High power inverter system, Power applianc
6.6. Size:1212K blue-rocket-elect
brcs035n08shzc.pdf
BRCS035N08SHZC Rev.C Mar.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resista
6.7. Size:1235K blue-rocket-elect
brcs035n06szc.pdf
BRCS035N06SZC Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
6.8. Size:1848K blue-rocket-elect
brcs035n03zc.pdf
BRCS035N03ZC Rev.A Dec.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features V (V)=30 V I =95A DS DRDS(ON)@10V3.6m(Typ.3.5mR) RDS(ON)@4.5V6.5m(Typ.5.0mR) HF Product. / Applications MB/NB/UMPC/VGA Buck
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