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BRCS035N10SHBD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS035N10SHBD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 237 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 180 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 80 nC
   Время нарастания (tr): 17 ns
   Выходная емкость (Cd): 2050 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для BRCS035N10SHBD

 

 

BRCS035N10SHBD Datasheet (PDF)

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 brcs035n10shbd.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N10SHBD Rev.A Aug.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications BMS High frequency switching and synchronous r

 2.1. Size:1338K  blue-rocket-elect
 brcs035n10shzc.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N10SHZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance

 6.1. Size:2015K  blue-rocket-elect
 brcs035n08shbd.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve

 6.2. Size:1676K  blue-rocket-elect
 brcs035n04sdp.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N04SDP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

 6.3. Size:1033K  blue-rocket-elect
 brcs035n06sdp.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N06SDP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Halogen-free Product. / Applications

 6.4. Size:1801K  blue-rocket-elect
 brcs035n03dp.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N03DP Rev.A Nov-2023 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =122 A (V = 20V) DS D GS RDS(ON)@10V3.5mR(Typ.3.4mR) RDS(ON)@4.5V6.5mR(Typ.5.0mR) HF Product. / Applications

 6.5. Size:1243K  blue-rocket-elect
 brcs035n08shra.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N08SHRA Rev.A Aug.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS BMS appliances, High power inverter system, Power applianc

 6.6. Size:1212K  blue-rocket-elect
 brcs035n08shzc.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N08SHZC Rev.C Mar.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resista

 6.7. Size:1235K  blue-rocket-elect
 brcs035n06szc.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N06SZC Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

 6.8. Size:1848K  blue-rocket-elect
 brcs035n03zc.pdf

BRCS035N10SHBD BRCS035N10SHBD

BRCS035N03ZC Rev.A Dec.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features V (V)=30 V I =95A DS DRDS(ON)@10V3.6m(Typ.3.5mR) RDS(ON)@4.5V6.5m(Typ.5.0mR) HF Product. / Applications MB/NB/UMPC/VGA Buck

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