FQD16N25C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD16N25C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Paquete / Cubierta: TO252 DPAK

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FQD16N25C Datasheet (PDF)

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fqd16n25c.pdf

January 2009QFETFQD16N25C250V N-Channel MOSFETFeatures Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailored to

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fqd16n25c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqd16n15 fqu16n15.pdf

April 2000TMQFETQFETQFETQFETFQD16N15 / FQU16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo

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fqd16n15tm.pdf

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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Recientemente añadidas las descripciónes de los transistores: