All MOSFET. FQD16N25C Equivalents Search

 

FQD16N25C Spec and Replacement


   Type Designator: FQD16N25C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO252 DPAK

 FQD16N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD16N25C Specs

 ..1. Size:1031K  fairchild semi
 fqd16n25c.pdf pdf_icon

FQD16N25C

January 2009 QFET FQD16N25C 250V N-Channel MOSFET Features Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to ... See More ⇒

 ..2. Size:607K  onsemi
 fqd16n25c.pdf pdf_icon

FQD16N25C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:730K  fairchild semi
 fqd16n15 fqu16n15.pdf pdf_icon

FQD16N25C

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒

 8.2. Size:725K  fairchild semi
 fqd16n15tm.pdf pdf_icon

FQD16N25C

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒

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Detailed specifications: NDS9952A , FQD12P10TMF085 , FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , NCEP15T14 , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 .

History: 2N7000A

Keywords - FQD16N25C MOSFET specs

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