All MOSFET. FQD16N25C Datasheet

 

FQD16N25C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD16N25C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO252_DPAK

FQD16N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQD16N25C Datasheet (PDF)

1.1. fqd16n25c.pdf Size:1031K _fairchild_semi

FQD16N25C
FQD16N25C

January 2009 QFET® FQD16N25C 250V N-Channel MOSFET Features Description • 16A, 250V, RDS(on) = 0.27? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 41 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to • Fast switching

4.1. fqd16n15_fqu16n15.pdf Size:730K _fairchild_semi

FQD16N25C
FQD16N25C

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 11.8A, 150V, RDS(on) = 0.16? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 23 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been e

Datasheet: NDS9952A , FQD12P10TM_F085 , FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , IRF250 , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 .

 


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