FQD16N25C Datasheet. Specs and Replacement

Type Designator: FQD16N25C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO252 DPAK

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FQD16N25C datasheet

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FQD16N25C

January 2009 QFET FQD16N25C 250V N-Channel MOSFET Features Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to ... See More ⇒

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FQD16N25C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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FQD16N25C

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒

 8.2. Size:725K  fairchild semi
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FQD16N25C

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo... See More ⇒

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Detailed specifications: NDS9952A, FQD12P10TMF085, FQD13N06, FQD13N06L, FQD13N10, NDS8434, FQD13N10L, MTD3055V, CS150N03A8, FQD17N08L, FQD17P06, FQD18N20V2, MTD3055VL, FQD19N10, FQA24N50, FQD19N10L, FQP6N70

Keywords - FQD16N25C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.