Справочник MOSFET. FQD16N25C

 

FQD16N25C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD16N25C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FQD16N25C

 

 

FQD16N25C Datasheet (PDF)

 ..1. Size:1031K  fairchild semi
 fqd16n25c.pdf

FQD16N25C FQD16N25C

January 2009QFETFQD16N25C250V N-Channel MOSFETFeatures Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailored to

 ..2. Size:607K  onsemi
 fqd16n25c.pdf

FQD16N25C FQD16N25C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:730K  fairchild semi
 fqd16n15 fqu16n15.pdf

FQD16N25C FQD16N25C

April 2000TMQFETQFETQFETQFETFQD16N15 / FQU16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo

 8.2. Size:725K  fairchild semi
 fqd16n15tm.pdf

FQD16N25C FQD16N25C

April 2000TMQFETQFETQFETQFETFQD16N15 / FQU16N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technolo

Другие MOSFET... NDS9952A , FQD12P10TMF085 , FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , 13N50 , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 .

 

 
Back to Top