FQD16N25C - описание и поиск аналогов

January 2009 QFET FQD16N25C 250V N-Channel MOSFET Features Description 16A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 41 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo

April 2000 TM QFET QFET QFET QFET FQD16N15 / FQU16N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technolo