FQA24N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA24N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 290 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de FQA24N50 MOSFET
FQA24N50 Datasheet (PDF)
fqa24n50.pdf
June 2014FQA24N50N-Channel QFET MOSFET500 V, 24 A, 200 mFeatures Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 90 nC)stripe, DMOS technology. Low Crss (Typ. 55 pF)This advanced technology has been e
fqa24n50 f109.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e
fqa24n50f.pdf
September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tail
fqa24n50f.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA24N50FFEATURESWith TO-3PN packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Otros transistores... FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , BS170 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 .
History: ME9435-G | JCS10N60CT | R6002END | ME66N04T | FQD19N10L | MSK30P02DF | YJP150N06AQ
History: ME9435-G | JCS10N60CT | R6002END | ME66N04T | FQD19N10L | MSK30P02DF | YJP150N06AQ
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