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FQA24N50 Spec and Replacement


   Type Designator: FQA24N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3PN

 FQA24N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA24N50 Specs

 ..1. Size:1520K  fairchild semi
fqa24n50.pdf pdf_icon

FQA24N50

June 2014 FQA24N50 N-Channel QFET MOSFET 500 V, 24 A, 200 m Features Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. Low Crss (Typ. 55 pF) This advanced technology has been e... See More ⇒

 ..2. Size:749K  fairchild semi
fqa24n50 f109.pdf pdf_icon

FQA24N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been e... See More ⇒

 0.1. Size:641K  fairchild semi
fqa24n50f.pdf pdf_icon

FQA24N50

September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tail... See More ⇒

 0.2. Size:210K  inchange semiconductor
fqa24n50f.pdf pdf_icon

FQA24N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA24N50F FEATURES With TO-3PN packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

Detailed specifications: FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , BS170 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 .

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