FQA24N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA24N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 290
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 90
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO3PN
FQA24N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA24N50
Datasheet (PDF)
..1. Size:1520K fairchild semi
fqa24n50.pdf 
June 2014FQA24N50N-Channel QFET MOSFET500 V, 24 A, 200 mFeatures Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 90 nC)stripe, DMOS technology. Low Crss (Typ. 55 pF)This advanced technology has been e
..2. Size:749K fairchild semi
fqa24n50 f109.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e
0.1. Size:641K fairchild semi
fqa24n50f.pdf
September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tail
0.2. Size:210K inchange semiconductor
fqa24n50f.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA24N50FFEATURESWith TO-3PN packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
8.1. Size:671K fairchild semi
fqa24n60.pdf
April 2000TMQFETQFETQFETQFETFQA24N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, RDS(on) = 0.24 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 110 nC)planar stripe, DMOS technology. Low Crss ( typical 56 pF)This advanced technology has be
8.2. Size:1634K onsemi
fqa24n60.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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