FQA24N50 Datasheet. Specs and Replacement
Type Designator: FQA24N50 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3PN
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FQA24N50 substitution
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FQA24N50 datasheet
fqa24n50.pdf
June 2014 FQA24N50 N-Channel QFET MOSFET 500 V, 24 A, 200 m Features Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. Low Crss (Typ. 55 pF) This advanced technology has been e... See More ⇒
fqa24n50 f109.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been e... See More ⇒
fqa24n50f.pdf
September 2001 TM FRFET FQA24N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially tail... See More ⇒
fqa24n50f.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQA24N50F FEATURES With TO-3PN packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: FQD13N10L, MTD3055V, FQD16N25C, FQD17N08L, FQD17P06, FQD18N20V2, MTD3055VL, FQD19N10, BS170, FQD19N10L, FQP6N70, FQD1N60C, FQP50N06, FQD1N80, FQA28N50, FQD20N06, FQD2N100
Keywords - FQA24N50 MOSFET specs
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History: WMT05N10T1
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