FQA24N50 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQA24N50
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 290 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 90 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: TO3PN
Аналог (замена) для FQA24N50
FQA24N50 Datasheet (PDF)
fqa24n50.pdf

June 2014FQA24N50N-Channel QFET MOSFET500 V, 24 A, 200 mFeatures Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 90 nC)stripe, DMOS technology. Low Crss (Typ. 55 pF)This advanced technology has been e
fqa24n50 f109.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e
fqa24n50f.pdf

September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tail
fqa24n50f.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA24N50FFEATURESWith TO-3PN packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Другие MOSFET... FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , 18N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 .
History: FDG6318PZ | IRLZ44NS | FDD86102
History: FDG6318PZ | IRLZ44NS | FDD86102



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