BRCS30P10IP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BRCS30P10IP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 16.5 nC
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 198 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-251
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BRCS30P10IP Datasheet (PDF)
brcs30p10ip.pdf
BRCS30P10IP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-251 P MOS P-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
brcs30p10dp.pdf
BRCS30P10DP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
brcs30n10dp.pdf
BRCS30N10DP Rev.A Sep.-2018 DATA SHEET / Descriptions NTO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on) Crss Low RDS(on) ,low gate charge, low C rss , fast switching. / Applications DC/DC
brcs300p016mc.pdf
BRCS300P016MC Rev.A Nov.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -16V I = -5A DS DRDS(ON)@-4.5V32m(Type.27m) RDS(ON)@-2.5V42m(Type.37.3m) RDS(ON)@-1.8V60m(Type.51m) HF Product. / Applications
brcs300p016zj.pdf
BRCS300P016ZJ Rev.A Sep.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features V (V) = -16V I = -11A DS DRDS(ON)@-4.5V32m HF Product. / Applications
brcs300p02zj.pdf
BRCS300P02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -20V ID = -8A RDS(ON)@-4.5V30m HF Product. / Applications
brcs30n02ip.pdf
BRCS30N02IP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-251 N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
brcs30n02dp.pdf
BRCS30N02DP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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