BRCS30P10IP Specs and Replacement
Type Designator: BRCS30P10IP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 198 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-251
BRCS30P10IP substitution
- MOSFET ⓘ Cross-Reference Search
BRCS30P10IP datasheet
brcs30p10ip.pdf
BRCS30P10IP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-251 P MOS P-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC ... See More ⇒
brcs30p10dp.pdf
BRCS30P10DP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC ... See More ⇒
Detailed specifications: BRCS2N65AA, BRCS2N65IP, BRCS2N65QF, BRCS300P016MC, BRCS300P016ZJ, BRCS30N02DP, BRCS30N02IP, BRCS30N10DP, 5N60, BRCS3134WA, BRCS3134ZK, BRCS3139ZK, BRCS3400MA, BRCS3404MA, BRCS3404MC, BRCS3411MF, BRCS350P04DP
Keywords - BRCS30P10IP MOSFET specs
BRCS30P10IP cross reference
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BRCS30P10IP replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HM20P02Q | RD3P175SN
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