RU30120M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU30120M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 590 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Paquete / Cubierta: DFN3030
Búsqueda de reemplazo de RU30120M3 MOSFET
RU30120M3 Datasheet (PDF)
ru30120m3.pdf
RU30120M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.8m(Typ.)@VGS=10V DDDRDS (ON) =2.3m(Typ.)@VGS=4.5VD Uses Ruichips advanced TrenchTM technology Ultra Low On-ResistanceG Fast Switching SpeedSS 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant)PIN1DFN3030DApplications Fast Ch
ru30120s.pdf
RU30120SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A, RDS (ON) =2.5m(Typ.)@VGS=10VD RDS (ON) =3.3m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum
ru30120l.pdf
RU30120LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Rat
ru30120r.pdf
RU30120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Ra
Otros transistores... RU18N65P , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C , RU2N65P , RU30110M , 20N50 , RU30180M-C , RU3030M3 , RU3040M3 , RU3070M3 , RU30C20M3 , RU30C30M , RU30C40M3 , RU30J30M3 .
History: JCS11N90WT | EMB20N03V | SW2N60A1 | WMS09DP03TS | AP6679BGJ-HF | RU20N65R | AP16N50W-HF
History: JCS11N90WT | EMB20N03V | SW2N60A1 | WMS09DP03TS | AP6679BGJ-HF | RU20N65R | AP16N50W-HF
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