RU30120M3 MOSFET Datasheet: N-Ch, 30V, 120A. Full specification with pinout and replacement list

RU30120M3 Specs and Replacement

Type Designator: RU30120M3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: DFN3030

RU30120M3 substitution

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RU30120M3 datasheet

..1. Size:557K ruichips
ru30120m3.pdf pdf_icon

RU30120M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.8m (Typ.)@VGS=10V D D D RDS (ON) =2.3m (Typ.)@VGS=4.5V D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN3030 D Applications Fast Ch... See More ⇒

7.1. Size:317K ruichips
ru30120s.pdf pdf_icon

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum ... See More ⇒

7.2. Size:276K ruichips
ru30120l.pdf pdf_icon

RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat... See More ⇒

7.3. Size:302K ruichips
ru30120r.pdf pdf_icon

RU30120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ra... See More ⇒

Detailed specifications: RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P, RU30110M, 20N50, RU30180M-C, RU3030M3, RU3040M3, RU3070M3, RU30C20M3, RU30C30M, RU30C40M3, RU30J30M3