RU30180M-C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU30180M-C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 260 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 76 nS
Cossⓘ - Capacitancia de salida: 460 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Encapsulados: DFN5060
Búsqueda de reemplazo de RU30180M-C MOSFET
- Selecciónⓘ de transistores por parámetros
RU30180M-C datasheet
..1. Size:551K ruichips
ru30180m-c.pdf 
RU30180M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =1.4m (Typ.)@VGS=10V RDS (ON) =1.6m (Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM Technology G Ultra Low On-Resistance SS S 100% Avalanche Tested D Reliable and Rugged D Qualified According to JEDEC Criteria D D PIN1 Lead Free and Green Devices (RoHS
9.1. Size:317K ruichips
ru30120s.pdf
RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum
9.2. Size:296K ruichips
ru30100l.pdf
RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces
9.3. Size:276K ruichips
ru30120l.pdf
RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat
9.4. Size:302K ruichips
ru30160r.pdf
RU30160R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Com
9.5. Size:763K ruichips
ru30110m.pdf
RU30110M N-Channel Advanced Power MOSFET Features Pin Description 30V/110A, RDS (ON) =3.8m (Typ.)@VGS=10V D RDS (ON) =4.6m (Typ.)@VGS=4.5V DD D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications DC/DC Conve
9.6. Size:302K ruichips
ru30120r.pdf
RU30120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ra
9.7. Size:281K ruichips
ru3013h.pdf
RU3013H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/11A, RDS (ON) =16m (Typ.) @ VGS=10V RDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Othe
9.8. Size:281K ruichips
ru3010h.pdf
RU3010H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/8A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Other
9.9. Size:306K ruichips
ru30100r.pdf
RU30100R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =4 m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Max
9.10. Size:304K ruichips
ru30105r.pdf
RU30105R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/125A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete
9.11. Size:294K ruichips
ru30105l.pdf
RU30105L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processor Power DC-DC Converters
9.12. Size:557K ruichips
ru30120m3.pdf
RU30120M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.8m (Typ.)@VGS=10V D D D RDS (ON) =2.3m (Typ.)@VGS=4.5V D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN3030 D Applications Fast Ch
9.13. Size:304K ruichips
ru30140r.pdf
RU30140R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/140A, RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit
9.14. Size:323K ruichips
ru30160s.pdf
RU30160S N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U
9.15. Size:295K ruichips
ru30106l.pdf
RU30106L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/130A, RDS (ON) =2.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processo
Otros transistores... RU205C
, RU2060L
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