All MOSFET. RU30180M-C Datasheet

 

RU30180M-C MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU30180M-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: DFN5060

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RU30180M-C Datasheet (PDF)

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