RU30180M-C PDF and Equivalents Search

 

RU30180M-C Specs and Replacement

Type Designator: RU30180M-C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: DFN5060

RU30180M-C substitution

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RU30180M-C datasheet

 ..1. Size:551K  ruichips
ru30180m-c.pdf pdf_icon

RU30180M-C

RU30180M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =1.4m (Typ.)@VGS=10V RDS (ON) =1.6m (Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM Technology G Ultra Low On-Resistance SS S 100% Avalanche Tested D Reliable and Rugged D Qualified According to JEDEC Criteria D D PIN1 Lead Free and Green Devices (RoHS... See More ⇒

 9.1. Size:317K  ruichips
ru30120s.pdf pdf_icon

RU30180M-C

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum ... See More ⇒

 9.2. Size:296K  ruichips
ru30100l.pdf pdf_icon

RU30180M-C

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces... See More ⇒

 9.3. Size:276K  ruichips
ru30120l.pdf pdf_icon

RU30180M-C

RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat... See More ⇒

Detailed specifications: RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P, RU30110M, RU30120M3, IRF520, RU3030M3, RU3040M3, RU3070M3, RU30C20M3, RU30C30M, RU30C40M3, RU30J30M3, RU30L30M3

Keywords - RU30180M-C MOSFET specs

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