FQD4N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD4N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
Paquete / Cubierta: TO252 DPAK
- Selección de transistores por parámetros
FQD4N25 Datasheet (PDF)
fqd4n25 fqu4n25.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n25.pdf

FQD4N25N-Channel QFET MOSFET250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V,DescriptionID = 1.5 AThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Gate Charge (Typ. 4.3 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF)technology has been especially
fqd4n25tf fqd4n25tm fqu4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced
Otros transistores... FQD2P40 , FQD30N06 , FQD3N60CTMWS , FQB9P25 , FQD3P50 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , STP65NF06 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 .
History: ME2306BS-G
History: ME2306BS-G



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