Аналоги FQD4N25. Основные параметры
Наименование производителя: FQD4N25
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm
Тип корпуса: TO252 DPAK
Аналог (замена) для FQD4N25
FQD4N25 даташит
fqd4n25 fqu4n25.pdf
May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology
fqd4n25.pdf
FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V, Description ID = 1.5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge (Typ. 4.3 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF) technology has been especially
fqd4n25tf fqd4n25tm fqu4n25tu.pdf
May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology
fqd4n20ltm.pdf
December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced
Другие MOSFET... FQD2P40 , FQD30N06 , FQD3N60CTMWS , FQB9P25 , FQD3P50 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , STP65NF06 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 .
History: JCS6N90GDA | APM4430 | IXFH67N10 | IXTH102N20T | TSM3455CX6 | IXTY1N100P | DHS020N04
History: JCS6N90GDA | APM4430 | IXFH67N10 | IXTH102N20T | TSM3455CX6 | IXTY1N100P | DHS020N04
Список транзисторов
Обновления
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