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FQD4N25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD4N25

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 37 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 3 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 1.75 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD4N25

 

 

FQD4N25 Datasheet (PDF)

1.1. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQD4N25
FQD4N25

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been espe

4.1. fqd4n20 fqu4n20.pdf Size:819K _fairchild_semi

FQD4N25
FQD4N25

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to

 5.1. fqd4n50 fqu4n50.pdf Size:844K _fairchild_semi

FQD4N25
FQD4N25

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to

Другие MOSFET... FQD2P40 , FQD30N06 , FQD3N60CTM_WS , FQB9P25 , FQD3P50 , FQD3P50TM_F085 , FQD4N20 , FQP11P06 , IRF9Z34 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 .

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Список транзисторов

Обновления

MOSFET: FQA22P10 | FQA20N40 | FQA19N20L | FQA17P10 | FQA17N40 | FQA16N50 | FQA16N25C | FQA14N30 | FQA13N80 | FQA13N50C | FQA13N50 | FQA12P20 | FQA12N60 | FQA11N90C | FQA11N90 |
 


 

 

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