FQD4N25 PDF and Equivalents Search

 

FQD4N25 Specs and Replacement

Type Designator: FQD4N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm

Package: TO252 DPAK

FQD4N25 substitution

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FQD4N25 datasheet

 ..1. Size:722K  fairchild semi
fqd4n25 fqu4n25.pdf pdf_icon

FQD4N25

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 ..2. Size:822K  onsemi
fqd4n25.pdf pdf_icon

FQD4N25

FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V, Description ID = 1.5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge (Typ. 4.3 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF) technology has been especially... See More ⇒

 0.1. Size:717K  fairchild semi
fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQD4N25

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 8.1. Size:521K  fairchild semi
fqd4n20ltm.pdf pdf_icon

FQD4N25

December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced... See More ⇒

Detailed specifications: FQD2P40, FQD30N06, FQD3N60CTMWS, FQB9P25, FQD3P50, FQD3P50TMF085, FQD4N20, FQP11P06, STP65NF06, FQD4P25, FQD5N20L, FQP12P10, FQD5N60C, FDS4675, FQD5P10, FQD5P20, FQD6N25

Keywords - FQD4N25 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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