RUH6080M3-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RUH6080M3-C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN3030

Búsqueda de reemplazo de MOSFET RUH6080M3-C

RUH6080M3-C Datasheet (PDF)

..1. Size:225K ruichips
ruh6080m3-c.pdf

RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De

7.1. Size:372K ruichips
ruh6080r.pdf

RUH6080RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6.2m(Typ.)@VGS=10V RDS (ON) =7m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceUlt L O R i t Exceptional dv/dt Capability Fast Switching and Fully Avalanche Rated 100% Avalanche Tested

9.1. Size:283K ruichips
ruh60120m.pdf

RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic

9.2. Size:321K ruichips
ruh60120l.pdf

RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli

9.3. Size:384K ruichips
ruh60100m.pdf

RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power

9.4. Size:240K ruichips
ruh60d60m.pdf

RUH60D60MDual N-Channel Advanced Power MOSFETFeatures Pin Description 60V/60A,D2RDS (ON) =7.2m(Typ.)@VGS=10VD2D1RDS (ON) =8.2m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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